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EasyPACK power module Infineon FS28MR12W1M1HB11HPSA1 with CoolSiC Trench MOSFET and rugged mounting clamps

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EasyPACK power module Infineon FS28MR12W1M1HB11HPSA1 with CoolSiC Trench MOSFET and rugged mounting clamps

Description : Power Driver Modules RoHS

Mfr. Part # : FS28MR12W1M1HB11HPSA1

Model Number : FS28MR12W1M1HB11HPSA1

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Product Overview

The FS28MR12W1M1H_B11 is a preliminary EasyPACK module featuring CoolSiC Trench MOSFET technology. Designed for high-frequency switching applications, this module offers low inductive design and low switching losses. It is suitable for DC/DC converters, motor drives, and UPS systems. The module is qualified for industrial applications according to relevant IEC standards.

Product Attributes

Brand: Infineon
Technology: CoolSiC Trench MOSFET
Package Type: EasyPACK
Mounting: Rugged mounting with integrated mounting clamps
Contact Technology: PressFIT
Integrated Sensor: NTC temperature sensor
Product Validation: Qualified for industrial applications (IEC 60747, 60749, 60068)

Technical Specifications

Parameter	Symbol	Note or test condition	Values	Unit
General Features
Drain-source voltage	VDSS	Tvj = 25 C	1200	V
Continuous DC drain current	IDDC	Tvj = 175 C, VGS = 18 V, TH = 80 C	30	A
Repetitive peak drain current	IDRM	verified by design, tp limited by Tvjmax	60	A
Stray inductance module	LsCE		19	nH
Module lead resistance, terminals - chip	RCC'+EE'	TH = 25 C, per switch	5.3	m
Storage temperature	Tstg		-40 to 125	C
Mounting force per clamp	F		20 to 50	N
Weight	G		24	g
MOSFET Characteristics
Drain-source on-resistance	RDS(on)	ID = 30 A, VGS = 18 V, Tvj = 25 C	26.4	m
Drain-source on-resistance	RDS(on)	ID = 30 A, VGS = 18 V, Tvj = 125 C	42.8	m
Drain-source on-resistance	RDS(on)	ID = 30 A, VGS = 18 V, Tvj = 175 C	56.8	m
Gate threshold voltage	VGS(th)	ID = 12 mA, VDS = VGS, Tvj = 25 C	3.45 to 5.15	V
Total gate charge	QG	VDD = 800 V, VGS = -3/18 V	0.09	C
Input capacitance	CISS	f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C	2.7	nF
Output capacitance	COSS	f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C	0.128	nF
Reverse transfer capacitance	Crss	f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C	0.009	nF
Drain-source leakage current	IDSS	VDS = 1200 V, VGS = -3 V, Tvj = 25 C	0.02 to 208	A
Turn-on energy loss per pulse	Eon	ID = 30 A, VDD = 600 V, L = 35 nH, VGS = -3/18 V, RGon = 6.2 , di/dt = 2.7 kA/s (Tvj = 175 C)	0.47 to 0.661	mJ
Turn-off energy loss per pulse	Eoff	ID = 30 A, VDD = 600 V, L = 35 nH, VGS = -3/18 V, RGoff = 5.1 , dv/dt = 25 kV/s (Tvj = 175 C)	0.112 to 0.123	mJ
Thermal resistance, junction to heat sink	RthJH	per MOSFET, grease = 1 W/(mK)	1.4	K/W
Temperature under switching conditions	Tvj op		-40 to 175	C
Body Diode (MOSFET) Characteristics
DC body diode forward current	ISD	Tvj = 175 C, VGS = -3 V, TH = 80 C	15	A
Forward voltage	VSD	ISD = 30 A, VGS = -3 V, Tvj = 25 C	4.2 to 5.35	V
Forward voltage	VSD	ISD = 30 A, VGS = -3 V, Tvj = 175 C	3.8	V
NTC-Thermistor Characteristics
Rated resistance	R25	TNTC = 25 C	5	k
Deviation of R100	R/R	TNTC = 100 C, R100 = 493	-5 to 5	%
Power dissipation	P25	TNTC = 25 C	20	mW
B-value	B25/100	R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]	3433	K

2411261535_Infineon-FS28MR12W1M1HB11HPSA1_C20190965.pdf

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