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Ciss-Input Capacitance : 25pF@15V
Operating Temperature : -65℃~+200℃@(Tj)
Pd - Power Dissipation : 500mW
Drain Current (Idss) : 30mA@18V
FET Type : -
RDS(on) : 75Ω
Gate-Source Breakdown Voltage (Vgss) : 30V
Gate-Source Cutoff Voltage (VGS(off)) : 5V@1nA
Description : 500mW 30mA@18V 75Ω 30V SMD-3P JFETs RoHS
Mfr. Part # : MQ2N5114UB
Model Number : MQ2N5114UB
Package : SMD-3P
This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is RoHS compliant in its commercial grade versions. Screening in reference to MIL-PRF-19500 is available.
| Part Number | Gate-Source Breakdown Voltage (V(BR)GSS) | Drain-Source "On" State Voltage (VDS(on)) @ ID = -15mA | Gate Reverse Current (IGSS) @ VDS=0, VGS=20V | Drain Current Cutoff (ID(off)) @ VGS=12V, VDS=-15V | Zero Gate Voltage Drain Current (IDSS) @ VGS=0, VDS=-18V | Gate-Source Cutoff (VGS(off)) @ VDS=-15V, ID=-1.0nA | Small-Signal Drain-Source "On" State Resistance (rds(on)1) @ VGS=0, ID=-1.0mA | Small-Signal Drain-Source "On" State Resistance (rds(on)2) @ VGS=0, ID=0; f=1kHz | Small-Signal Reverse Transfer Capacitance (Crss) | Small-Signal Input Capacitance (Ciss) | Turn-On Delay Time (Td(on)) | Rise Time (tr) | Turn-Off Delay Time (Td(off)) |
| 2N5114UB | 30V | -1.3V | 500pA | -500pA | -30 to -90mA | 5.0 to 10V | 75 | 75 | 7.0pF | 25pF | 6s | 10s | 6s |
| 2N5115UB | 30V | -0.8V | 500pA | -500pA | -15 to -60mA | 3.0 to 6.0V | 100 | 100 | 7.0pF | 25pF | 10s | 20s | 8s |
| 2N5116UB | 30V | -0.6V | 500pA | -500pA | -5.0 to -25mA | 1.0 to 4.0V | 175 | 175 | 7.0pF | 27pF | 25s | 35s | 20s |
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RoHS Compliant P Channel J FET MICROCHIP MQ2N5114UB Low Profile Surface Mount Package for Commercial Images |