Home > JFETs >

Surface mount P channel J FET MICROCHIP MX2N5115UB designed for high reliability voltage regulation

Product Categories

Bipolar Transistor Arrays [120]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [536]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Surface mount P channel J FET MICROCHIP MX2N5115UB designed for high reliability voltage regulation

Ciss-Input Capacitance : 25pF@15V

Operating Temperature : -65℃~+200℃@(Tj)

Pd - Power Dissipation : 500mW

FET Type : -

Drain Current (Idss) : 15mA@15V

RDS(on) : 100Ω

Gate-Source Breakdown Voltage (Vgss) : 30V

Gate-Source Cutoff Voltage (VGS(off)) : 3V@1nA

Description : 500mW 15mA@15V 100Ω 30V SMD-3P JFETs RoHS

Mfr. Part # : MX2N5115UB

Model Number : MX2N5115UB

Package : SMD-3P

Contact Now

Product Overview

This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is suitable for various voltage regulation applications. RoHS compliant versions are available for commercial grades.

Product Attributes

Brand: Microsemi Corporation
Package: UB Package (Surface Mount), TO-18 Package (Leaded)
Certifications: Screening in reference to MIL-PRF-19500 available, RoHS compliant versions available (commercial grade only)
Material: Ceramic package, Gold Plating over Nickel underplate (Terminals)
Marking: Part number, date code, manufacturers ID
Tape & Reel option: Standard per EIA-418D
Weight: < 0.04 Grams

Technical Specifications

Model	Gate-Source Breakdown Voltage (V(BR)GSS)	Drain-Source "On" State Voltage (VDS(on)) @ ID = -15 mA	Drain-Source "On" State Voltage (VDS(on)) @ ID = -7.0 mA	Drain-Source "On" State Voltage (VDS(on)) @ ID = -3.0 mA	Gate Reverse Current (IGSS)	Drain Current Cutoff (ID(off))	Zero Gate Voltage Drain Current (IDSS) @ VDS = -18V	Zero Gate Voltage Drain Current (IDSS) @ VDS = -15V	Gate-Source Cutoff (VGS(off)) @ ID = -1.0 nA	Small-Signal Drain-Source "On" State Resistance (rds(on)1)	Small-Signal Drain-Source "On" State Resistance (rds(on)2)	Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance (Crss)	Small-Signal, Common-Source Short-Circuit Input Capacitance (Ciss)	Turn-On Delay Time (Td(on))	Rise Time (tr)	Turn-Off Delay Time (Td(off))
2N5114UB	30 V	-1.3 V	-	-	500 pA	-500 pA	-30 mA	-90 mA	5.0 V	75	75	7.0 pF	25 pF	6 s	10 s	6 s
2N5115UB	30 V	-	-0.8 V	-	500 pA	-500 pA	-15 mA	-60 mA	3.0 V	100	100	7.0 pF	25 pF	10 s	20 s	8 s
2N5116UB	30 V	-	-	-0.6 V	500 pA	-500 pA	-5.0 mA	-25 mA	1.0 V	175	175	7.0 pF	27 pF	25 s	35 s	20 s

2410311740_MICROCHIP-MX2N5115UB_C17547760.pdf

Buy cheap Surface mount P channel J FET MICROCHIP MX2N5115UB designed for high reliability voltage regulation product

Surface mount P channel J FET MICROCHIP MX2N5115UB designed for high reliability voltage regulation Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!