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Compact SOT 883 package onsemi TF412ST5G N Channel JFET for infrared sensor and amplifier circuits

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Compact SOT 883 package onsemi TF412ST5G N Channel JFET for infrared sensor and amplifier circuits

Ciss-Input Capacitance : 4pF@10V

Pd - Power Dissipation : 100mW

Drain Current (Idss) : 3mA@10V

FET Type : 1 N-channel

RDS(on) : -

Gate-Source Breakdown Voltage (Vgss) : 30V

Gate-Source Cutoff Voltage (VGS(off)) : -

Description : 100mW 3mA@10V 1 N-channel 30V SOT-883-3 JFETs RoHS

Mfr. Part # : TF412ST5G

Model Number : TF412ST5G

Package : SOT-883-3

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Product Overview

The TF412S is an N-Channel JFET designed for low-frequency general-purpose amplification, impedance conversion, and infrared sensor applications. Its ultrasmall SOT-883 package facilitates miniaturization in end products. Key features include low IGSS (max 1.0nA) and low Ciss (typ 4pF), contributing to efficient circuit design. This device is halogen-free compliant and offers ESD immunity < 200V (Machine Model).

Product Attributes

Brand: onsemi
Certifications: Halogen free compliance
Package: SOT-883
Material: Pb-free and Halogen Free

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Drain-to-Source Breakdown Voltage	V(BR)GDS	IG = 10A, VDS=0V	30	V
Gate-to-Source Leakage Current	IGSS	VGS = 20V, VDS=0V		1.0	nA
Cutoff Voltage	VGS(off)	VDS = 10V, ID = 1A	0.18		0.80		1.5	V
Drain Current	IDSS	VDS = 10V, VGS = 0V		1.2		3.0	mA
Forward Transfer Admittance	\| yfs \|	VDS = 10V, VGS=0V, f = 1kHz	3.0		5.0	mS
Input Capacitance	Ciss	VDS = 10V, VGS = 0V, f = 1MHz		4	pF
Reverse Transfer Capacitance	Crss	VDS = 10V, VGS = 0V, f = 1MHz		1.1	pF

2410121818_onsemi-TF412ST5G_C719800.pdf

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