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Surface Mounted NPN PNP Double Resistor Equipped Transistors Nexperia PUMD12 115 for Circuit Design

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Surface Mounted NPN PNP Double Resistor Equipped Transistors Nexperia PUMD12 115 for Circuit Design

Output Voltage(VO(on)) : -

Input Resistor : 61kΩ

Resistor Ratio : 1.2

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-363

Mfr. Part # : PUMD12,115

Model Number : PUMD12,115

Package : SOT-363

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Nexperia PEMD12; PUMD12 NPN/PNP Resistor-Equipped Transistors

Product Overview

The Nexperia PEMD12 and PUMD12 are NPN/PNP double Resistor-Equipped Transistors (RETs) in Surface-Mounted Device (SMD) plastic packages. These devices feature built-in bias resistors, reducing component count, pick-and-place costs, and simplifying circuit design. They are AEC-Q101 qualified and suitable for low current peripheral driver applications, control of IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN/PNP double Resistor-Equipped Transistors (RETs)
  • Certifications: AEC-Q101 qualified

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 33 47 61 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage TR1 Positive - - +40 V
VI Input voltage TR1 Negative - - -10 V
VI Input voltage TR2 Positive - - +10 V
VI Input voltage TR2 Negative - - -40 V
ICM Peak collector current Single pulse; tp 1 ms - - 100 mA
Per device
Ptot Total power dissipation Tamb 25 C (PEMD12 SOT666) - - 300 mW
Ptot Total power dissipation Tamb 25 C (PUMD12 SOT363) - - 300 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - +150 C
Tstg Storage temperature - -65 - +150 C
Thermal characteristics (FR4 PCB, standard footprint)
Rth(j-a) Thermal resistance from junction to ambient in free air (PEMD12 SOT666) - - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PUMD12 SOT363) - - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PEMD12 SOT666) Per device - - 417 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PUMD12 SOT363) Per device - - 417 K/W
Characteristics (Tamb = 25 C unless otherwise specified)
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 90 A
hFE DC current gain VCE = 5 V; IC = 5 mA 80 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 1.2 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 2 mA 3 1.6 - V
R1 Bias resistor 1 (input) - 33 47 61 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz (TR1 NPN) - - 2.5 pF
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz (TR2 PNP) - - 3 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz (TR1 NPN) - 230 - MHz
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz (TR2 PNP) - 180 - MHz
Models & Packages
Type Number Package Name Description Package Configuration PNP/PNP Complement NPN/NPN Complement JEITA
PEMD12 SOT666 Plastic surface-mounted package; 6 leads Ultra small and flat lead - PEMB2, PEMH2 -
PUMD12 SOT363 Plastic surface-mounted package; 6 leads Very small PUMB2, PUMH2 - SC-88

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications

2410121742_Nexperia-PUMD12-115_C513103.pdf


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