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General purpose PNP resistor equipped transistors Nexperia PDTA123EU 115 for circuit driver and inverter

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General purpose PNP resistor equipped transistors Nexperia PDTA123EU 115 for circuit driver and inverter

Input Resistor : 2.2kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-323

Mfr. Part # : PDTA123EU,115

Model Number : PDTA123EU,115

Package : SOT-323

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Product Overview

The PDTA123E series PNP resistor-equipped transistors are designed for simplified circuit design, offering a reduction in component count and pick-and-place costs. These transistors are suitable for general-purpose switching and amplification, as well as inverter and interface circuits, and circuit driver applications. Featuring built-in bias resistors, they provide an efficient solution for various electronic designs.

Product Attributes

Brand: NXP Semiconductors
Product Type: PNP resistor-equipped transistors
Resistor Values: R1 = 2.2 k, R2 = 2.2 k
Origin: Made in Hong Kong, Malaysia, or China (indicated by marking code)

Technical Specifications

Model	Package	Marking Code	NPN Complement	Collector-Emitter Voltage (VCEO)	Output Current (IO)	Bias Resistor (R1)	Bias Resistor (R2)
PDTA123EE	SOT416 (SC-75)	5C	PDTC123EE	-50 V	-100 mA	2.2 k	2.2 k
PDTA123EEF	SOT490 (SC-89)	6C	PDTC123EEF	-50 V	-100 mA	2.2 k	2.2 k
PDTA123EK	SOT346 (SC-59)	42	PDTC123EK	-50 V	-100 mA	2.2 k	2.2 k
PDTA123EM	SOT883 (SC-101)	F7	PDTC123EM	-50 V	-100 mA	2.2 k	2.2 k
PDTA123ES	SOT54 (TO-92)	TA123E	PDTC123ES	-50 V	-100 mA	2.2 k	2.2 k
PDTA123ET	SOT23	*21(1)	PDTC123ET	-50 V	-100 mA	2.2 k	2.2 k
PDTA123EU	SOT323 (SC-70)	*42(1)	PDTC123EU	-50 V	-100 mA	2.2 k	2.2 k

Parameter	Conditions	Min.	Typ.	Max.	Unit
Collector-Base Voltage (VCBO)	Open emitter	-	-	-50	V
Collector-Emitter Voltage (VCEO)	Open base	-	-	-50	V
Emitter-Base Voltage (VEBO)	Open collector	-	-	-10	V
Input Voltage (VI)	Positive	-	-	+10	V
Input Voltage (VI)	Negative	-	-	-12	V
Output Current (IO)	DC	-	-	-100	mA
Peak Collector Current (ICM)	-	-	-	-100	mA
Total Power Dissipation (Ptot)	Tamb 25 C (SOT54)	-	-	500	mW
Total Power Dissipation (Ptot)	Tamb 25 C (SOT23)	-	-	250	mW
Total Power Dissipation (Ptot)	Tamb 25 C (SOT346)	-	-	250	mW
Total Power Dissipation (Ptot)	Tamb 25 C (SOT323)	-	-	200	mW
Total Power Dissipation (Ptot)	Tamb 25 C (SOT416)	-	-	150	mW
Total Power Dissipation (Ptot)	Tamb 25 C (SOT490)	-	-	250	mW
Total Power Dissipation (Ptot)	Tamb 25 C (SOT883)	-	-	250	mW
Storage Temperature (Tstg)	-	-65	-	+150	C
Junction Temperature (Tj)	-	-	-	150	C
Operating Ambient Temperature (Tamb)	-	-65	-	+150	C
Collector-Base Cut-off Current (ICBO)	VCB = -50 V; IE = 0 A	-	-	-100	nA
Collector-Emitter Cut-off Current (ICEO)	VCE = -30 V; IB = 0 A	-	-	-1	A
Collector-Emitter Cut-off Current (ICEO)	VCE = -30 V; IB = 0 A; Tj = 150 C	-	-	-50	A
Emitter-Base Cut-off Current (IEBO)	VEB = -5 V; IC = 0 A	-	-	-2	mA
DC Current Gain (hFE)	VCE = -5 V; IC = -20 mA	30	-	-	-
Collector-Emitter Saturation Voltage (VCEsat)	IC = -10 mA; IB = -0.5 mA	-	-	-150	mV
Input-Off Voltage (Vi(off))	IC = -1 mA; VCE = -5 V	-1.2	-	-0.5	V
Input-On Voltage (Vi(on))	IC = -20 mA; VCE = -0.3 V	-2	-1.6	-	V
Input Resistor (R1)	-	1.54	2.2	2.86	k
Resistor Ratio (R2/R1)	-	0.8	1	1.2	-
Collector Capacitance (Cc)	IE = ie = 0 A; VCB = -10 V; f = 1 MHz	-	-	3	pF

2410121943_Nexperia-PDTA123EU-115_C552061.pdf

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