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Double Silicon PNP Digital Transistor PJSEMI MMDTA143Z with Built In Bias Resistors in SOT 23 6 Package

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Double Silicon PNP Digital Transistor PJSEMI MMDTA143Z with Built In Bias Resistors in SOT 23 6 Package

Output Voltage(VO(on)) : 300mV

Resistor Ratio : 10

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased Transistors 50V 100mA 200mW Surface Mount SOT-23-6

Mfr. Part # : MMDTA143Z

Model Number : MMDTA143Z

Package : SOT-23-6

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MMDTA143Z Double Silicon PNP Digital Transistor

The MMDTA143Z is a double silicon PNP digital transistor designed to simplify circuit design. It features built-in bias resistors (R1=4.7K, R2=47K), making it a convenient component for various electronic applications. This transistor is supplied in a SOT-23-6 package.

Product Attributes

Brand: PingJingSemi
Package: SOT-23-6
Shipping: 3,000PCS/Reel&7inches

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
DC Current Gain	GI	80	--	--	--	VO = -5 V, IO = -10 mA
Output Cutoff Current	-IO(OFF)	--	--	500	nA	VO = -50 V
Input Current	-II	--	--	1.8	mA	VI = -5 V
Output Voltage (ON)	-VO(ON)	--	--	0.3	V	IO = -10 mA, II = -0.5 mA
Input Voltage (ON)	-VI(ON)	--	--	1.3	V	VO = -0.3 V, IO = -2 mA
Input Voltage (OFF)	-VI(OFF)	0.5	--	--	V	VO = -5 V, IO = -0.1 mA
Transition Frequency	fT	--	250	--	MHz	VO = -10 V, IO = -5 mA

Parameter	Symbol	Value	Unit	Conditions
Output Voltage	-VO	50	V	TA=25
Input Voltage	-VI	30,-5	V	TA=25
Output Current	-IO	100	mA	TA=25
Maximum Power Dissipation	PD	200	mW	TA=25
Junction Temperature	TJ	150	C	--
Storage Temperature Range	TSTG	-55 to +150	C	--

Device	R1 (K)	R2 (K)	Marking Code
MMDTA143Z	4.7	47	143Z

2411121111_PJSEMI-MMDTA143Z_C41413538.pdf

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