Home > Single, Pre-Biased Bipolar Transistors >

Nexperia PUMD2 115 double transistor NPN PNP resistor equipped with bias resistors in SOT363 package

Product Categories

Bipolar Transistor Arrays [120]
Single IGBTs [586]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Nexperia PUMD2 115 double transistor NPN PNP resistor equipped with bias resistors in SOT363 package

Output Voltage(VO(on)) : -

Input Resistor : 22kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363)

Mfr. Part # : PUMD2,115

Model Number : PUMD2,115

Package : TSSOP-6(SOT-363)

Contact Now

Product Overview

The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and incorporates built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. This device is suitable for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

Brand: Nexperia
Package Type: SOT363 (SC-88)
Configuration: NPN/PNP Resistor-Equipped Double Transistor (RET)

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per transistor
VCEO	Collector-emitter voltage	open base [1]	-	-	50	V
IO	Output current	[1]	-	-	100	mA
R1	Bias resistor 1 (input)	[2]	15.4	22	28.6	k
R2/R1	Bias resistor ratio	[2]	0.8	1	1.2	-
VCBO	Collector-base voltage	open emitter [1]	-	-	50	V
VEBO	Emitter-base voltage	open collector [1]	-	-	10	V
VI (TR1 NPN)	Input voltage		-10	-	40	V
VI (TR2 PNP)	Input voltage		-40	-	10	V
Ptot	Total power dissipation	Tamb 25 C [2]	-	-	200	mW
Rth(j-a)	Thermal resistance junction to ambient	in free air [1]	-	-	625	K/W
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A; Tamb = 25 C [1]	50	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 2 mA; IB = 0 A; Tamb = 25 C [1]	50	-	-	V
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0 A; Tamb = 25 C [1]	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tamb = 25 C [1]	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tj = 150 C [1]	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 mA; Tamb = 25 C [1]	-	-	180	A
hFE	DC current gain	VCE = 5 V; IC = 5 mA; Tamb = 25 C [1]	60	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA; Tamb = 25 C [1]	-	-	150	mV
VI(off)	Off-state input voltage	VCE = 5 V; IC = 100 A; Tamb = 25 C [1]	-	1.1	0.8	V
VI(on)	On-state input voltage	VCE = 0.3 V; IC = 5 mA; Tamb = 25 C	2.5	1.7	-	V
Cc (TR1 NPN)	Collector capacitance	VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C	-	-	2.5	pF
fT (TR1 NPN)	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [3]	-	230	-	MHz
Cc (TR2 PNP)	Collector capacitance	VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C	-	-	3	pF
fT (TR2 PNP)	Transition frequency	VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [3]	-	180	-	MHz
Per device
Ptot	Total power dissipation	Tamb 25 C [2]	-	-	300	mW
Rth(j-a)	Thermal resistance junction to ambient	in free air [1]	-	-	417	K/W
General
R1	Bias resistor 1 (input)	[2]	15.4	22	28.6	k
R2/R1	Bias resistor ratio	[2]	0.8	1	1.2	-
Package	TSSOP6 (SOT363)
Body dimensions			2.1 x 1.25 x 0.95			mm
Pitch			0.65			mm

[1] For the PNP transistor with negative polarity.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.

[3] Characteristics of built-in transistor.

2504101957_Nexperia-PUMD2-115_C426874.pdf

Buy cheap Nexperia PUMD2 115 double transistor NPN PNP resistor equipped with bias resistors in SOT363 package product

Nexperia PUMD2 115 double transistor NPN PNP resistor equipped with bias resistors in SOT363 package Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!