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PNP resistor equipped transistor Nexperia PDTA114ET 215 designed for digital automotive applications

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PNP resistor equipped transistor Nexperia PDTA114ET 215 designed for digital automotive applications

Emitter-Base Voltage VEBO : 10V

Input Resistor : 13kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-23

Mfr. Part # : PDTA114ET,215

Model Number : PDTA114ET,215

Package : SOT-23

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Product Overview

The PDTA114E series comprises PNP resistor-equipped transistors (RETs) designed for digital applications in automotive and industrial segments. These devices are housed in small Surface-Mounted Device (SMD) plastic packages, offering a reduced component count and simplified circuit design due to their built-in bias resistors. They serve as a cost-saving alternative to BC847/857 series in digital applications, ideal for controlling IC inputs and switching loads. The series is AEC-Q101 qualified, ensuring suitability for demanding environments.

Product Attributes

  • Brand: NXP Semiconductors
  • Technology: PNP Resistor-Equipped Transistor (RET)
  • Certifications: AEC-Q101 qualified
  • Package Types: Small Surface-Mounted Device (SMD) plastic packages

Technical Specifications

Model Number Package Type NPN Complement Output Current Capability (IO) Bias Resistor R1 Bias Resistor Ratio (R2/R1) Collector-Emitter Voltage (VCEO)
PDTA114EE SOT416 (SC-75) PDTC114EE -100 mA 7 k (min) - 13 k (max), Typ 10 k 0.8 (min) - 1.2 (max), Typ 1.0 -50 V
PDTA114EM SOT883 (SC-101) PDTC114EM -100 mA 7 k (min) - 13 k (max), Typ 10 k 0.8 (min) - 1.2 (max), Typ 1.0 -50 V
PDTA114ET SOT23 (TO-236AB) PDTC114ET -100 mA 7 k (min) - 13 k (max), Typ 10 k 0.8 (min) - 1.2 (max), Typ 1.0 -50 V
PDTA114EU SOT323 (SC-70) PDTC114EU -100 mA 7 k (min) - 13 k (max), Typ 10 k 0.8 (min) - 1.2 (max), Typ 1.0 -50 V

Applications

  • Digital applications in automotive and industrial segments
  • Control of IC inputs
  • Switching loads

Pinning Information

Package Type Pin 1 Pin 2 Pin 3
SOT23; SOT323; SOT416 Input (base) GND (emitter) Output (collector)
SOT883 Input (base) GND (emitter) Output (collector)

Marking Codes

Type Number Marking Code
PDTA114EE 03
PDTA114EM E5
PDTA114ET *03
PDTA114EU *03

Limiting Values

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage open emitter - -50 V
VCEO Collector-emitter voltage open base - -50 V
VEBO Emitter-base voltage open collector - -10 V
VI Input voltage positive - +40 V
VI Input voltage negative - -10 V
IO Output current - - -100 mA
ICM Peak collector current single pulse; tp 1 ms - -100 mA
Ptot Total power dissipation Tamb 25 C; PDTA114EE (SOT416) - 150 mW
Ptot Total power dissipation Tamb 25 C; PDTA114EM (SOT883) - 250 mW
Ptot Total power dissipation Tamb 25 C; PDTA114ET (SOT23) - 250 mW
Ptot Total power dissipation Tamb 25 C; PDTA114EU (SOT323) - 200 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature - -65 +150 C
Tstg Storage temperature - -65 +150 C

Thermal Characteristics

Symbol Parameter Conditions Typ Unit
Rth(j-a) Thermal resistance from junction to ambient PDTA114EE (SOT416) 830 K/W
Rth(j-a) Thermal resistance from junction to ambient PDTA114EM (SOT883) 500 K/W
Rth(j-a) Thermal resistance from junction to ambient PDTA114ET (SOT23) 500 K/W
Rth(j-a) Thermal resistance from junction to ambient PDTA114EU (SOT323) 625 K/W

Characteristics

Symbol Parameter Conditions Min Typ Max Unit
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A - - -1 A
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A; Tj = 150 C - - -5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -400 A
hFE DC current gain VCE = -5 V; IC = -5 mA 30 - - -
VCEsat Collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA - - -150 mV
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A - -1.1 -0.8 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -10 mA -2.5 -1.8 - V
R1 Bias resistor 1 (input) - 7 10 13 k
R2/R1 Bias resistor ratio - 0.8 1.0 1.2 -
Cc Collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz - 180 - MHz

Ordering Information

Type Number Package Name Description Version
PDTA114EE SC-75 Plastic surface-mounted package; 3 leads SOT416
PDTA114EM SC-101 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883
PDTA114ET - Plastic surface-mounted package; 3 leads SOT23
PDTA114EU SC-70 Plastic surface-mounted package; 3 leads SOT323

Packing Information

Type Number Package Description Packing Quantity
PDTA114EE SOT416 4 mm pitch, 8 mm tape and reel 3000
PDTA114EM SOT883 2 mm pitch, 8 mm tape and reel 10000
PDTA114ET SOT23 4 mm pitch, 8 mm tape and reel 10000
PDTA114EU SOT323 4 mm pitch, 8 mm tape and reel 3000

2410121732_Nexperia-PDTA114ET-215_C75551.pdf


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