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Compact SOT363 Package Nexperia PUMH9 125 Resistor Equipped Double Transistor 50 Volt 100 Milliampere

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Compact SOT363 Package Nexperia PUMH9 125 Resistor Equipped Double Transistor 50 Volt 100 Milliampere

Output Voltage(VO(on)) : -

Input Resistor : 13kΩ

Resistor Ratio : 5.7

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount TSSOP-6

Mfr. Part # : PUMH9,125

Model Number : PUMH9,125

Package : TSSOP-6

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Product Overview

The Nexperia PUMH9 is a 50 V, 100 mA NPN/NPN resistor-equipped double transistor (RET) in a compact SOT363 (SC-88) SMD plastic package. It features built-in bias resistors (R1 = 10 k, R2 = 47 k) that simplify circuit design, reduce component count, and lower pick-and-place costs. This transistor is suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847 series in digital applications, controlling IC inputs, and switching loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: Resistor-Equipped Double Transistor (RET)
  • Package Type: TSSOP6 (SOT363)
  • Complementary Products: PNP/PNP complement: PUMB9, NPN/PNP complement: PUMD9

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 3.7 4.7 5.7 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 6 V
VI Input voltage positive - - 40 V
VI Input voltage negative - - -6 V
IO Output current - - - 100 mA
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient [1] - - 625 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 150 A
hFE DC current gain VCE = 5 V; IC = 5 mA 100 - - -
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 0.7 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 1 mA 1.4 0.8 - V
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 3.7 4.7 5.7 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz [2] - 230 - MHz
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Rth(j-a) Thermal resistance junction to ambient [1] - - 417 K/W

[1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint.

[2] Characteristics of built-in transistor

Package Dimensions:

  • Body: 2.1 mm x 1.25 mm x 0.95 mm
  • Pitch: 0.65 mm

Marking Code: H%9 (where % is a placeholder for manufacturing site code)


2410121943_Nexperia-PUMH9-125_C553541.pdf


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