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Emitter-Base Voltage(Vebo) : 3V
Current - Collector Cutoff : 100nA
Pd - Power Dissipation : 350mW
Transition frequency(fT) : 650MHz
type : NPN
Current - Collector(Ic) : 50mA
Collector - Emitter Voltage VCEO : 25V
Operating Temperature : -55℃~+150℃@(Tj)
Description : Bipolar (BJT) Transistor NPN 25V 50mA 650MHz 350mW Surface Mount SOT-23
Mfr. Part # : MMBTH10
Model Number : MMBTH10
Package : SOT-23
The MMBTH10 is a Silicon Epitaxial Planar Transistor designed for high transition frequency applications. It offers efficient power dissipation and is suitable for VHF/UHF transistor applications.
| Parameter | Symbol | Test Conditions | MIN | MAX | UNIT |
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 30 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 25 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 3 | V | |
| Collector cut-off current | ICBO | VCB=25V,IE=0 | 0.1 | A | |
| Emitter cut-off current | IEBO | VEB=2V,IC=0 | 0.1 | A | |
| DC current gain | hFE | VCE=10V,IC=4.0mA | 60 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=4.0mA, IB= 0.4mA | 0.5 | V | |
| Base-emitter on voltage | VBE(on) | IC=4.0mA, VCE=10V | 0.95 | V | |
| Transition frequency | fT | VCE=10V, IC= 4.0mA, f=100MHz | 650 | MHz | |
| Collector-Base Capacitance | Ccb | VCB=10V,IE=0,f=1.0MHz | 0.7 | pF | |
| Collector-Base Feedback Capacitance | Crb | VCB=10V,IE=0,f=1.0MHz | 0.35 | 0.65 | pF |
| Collector Base Time Constant | rb'CC | IC=4mA,VCB=10V, f=31.8MHz | 9.0 | pS |
| Symbol | Parameter | Value | Units |
| VCBO | Collector-Base Voltage | 30 | V |
| VCEO | Collector-Emitter Voltage | 25 | V |
| VEBO | Emitter-Base Voltage | 3 | V |
| IC | Collector Current -Continuous | 50 | mA |
| PC | Collector Dissipation | 350 | mW |
| TJ, TSTG | Junction and Storage Temperature | -55 to +150 |
| Device | Package | Shipping |
| MMBTH10 | SOT-23 | 3000pcs / Tape & Reel |
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Transistor JSMSEMI MMBTH10 Silicon Epitaxial Planar Type Suitable for VHF UHF Frequency Applications Images |