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NPN transistor JSMSEMI MPS2222A suitable for switching amplification and general electronic circuits

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NPN transistor JSMSEMI MPS2222A suitable for switching amplification and general electronic circuits

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 10nA

Pd - Power Dissipation : 625mW

Transition frequency(fT) : 300MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 40V

Description : Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625mW Through Hole TO-92

Mfr. Part # : MPS2222A

Model Number : MPS2222A

Package : TO-92

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Product Overview

The MPS2222A is a general-purpose NPN silicon transistor designed for various electronic applications. It offers complementary PNP type availability with the MPS2907A. This transistor is suitable for switching and amplification circuits.

Product Attributes

Brand: JSMICRO Semiconductor
Model: MPS2222A
Complementary Type: MPS2907A
Material: Silicon
Package: TO-92

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	MAX	Units
Collector-Base Voltage	VCBO			75	V
Collector-Emitter Voltage	VCEO			40	V
Emitter-Base Voltage	VEBO			6	V
Collector Current - Continuous	IC			600	mA
Collector Power Dissipation	PC	TA=25		625	mW
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	150
Collector-base breakdown voltage	V(BR)CBO	IC= 10uA , IE = 0	75		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 10mA , IB = 0	40		V
Emitter-base breakdown voltage	V(BR)EBO	IE= 10uA, IC = 0	6		V
Collector cut-off current	ICBO	VCB= 60V, IE = 0		10	nA
Collector cut-off current	ICEX	VCE= 60V,VEB(Off)=3V		10	nA
Emitter cut-off current	IEBO	VEB= 3 V, IC = 0		10	nA
DC current gain	hFE(1)	VCE=10V,IC= 150mA	100	300
DC current gain	hFE(2)	VCE=10V,IC= 0.1mA	40
DC current gain	hFE(3) *	VCE=10V, IC= 500mA		42
Collector-emitter saturation voltage	VCE(sat)(1) *	IC= 500mA, IB=50mA		0.6	V
Collector-emitter saturation voltage	VCE(sat)(2) *	IC= 150mA, IB=15mA		0.3	V
Base-emitter saturation voltage	VBE(sat) *	IC= 500mA, IB= 50mA		1.2	V
Delay time	td	VCC=30V, VEB(Off)=-0.5V, IC=150mA,IB1=15mA		10	nS
Rise time	tr	VCC=30V, VEB(Off)=-0.5V, IC=150mA,IB1=15mA		25	nS
Storage time	tS	VCC=30V,Ic=150mA,IB1=IB2=15mA		225	nS
Fall time	tf	VCC=30V,Ic=150mA,IB1=IB2=15mA		60	nS
Transition frequency	fT	VCE=20V, IC=20mA, f=100MHz		300	MHz

2201121200_JSMSEMI-MPS2222A_C2874611.pdf

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