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High Saturation Voltage PNP Transistor GOODWORK FMMT591 with Low Equivalent On Resistance and SOT 23

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High Saturation Voltage PNP Transistor GOODWORK FMMT591 with Low Equivalent On Resistance and SOT 23

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 500mW

Transition frequency(fT) : 150MHz

type : PNP

Current - Collector(Ic) : 1A

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 60V 1A 150MHz 500mW Surface Mount SOT-23

Mfr. Part # : FMMT591

Model Number : FMMT591

Package : SOT-23

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Product Overview

The FMMT591 is a PNP Silicon Epitaxial Planar Transistor designed for high saturation voltage and excellent HFE linearity. It is complementary to the FMMT491 and features a low equivalent on-resistance with RSAT = 188m. The transistor is characterized for high current gain hold-up up to -2A.

Product Attributes

Type No.: FMMT591
Marking: 591
Package Code: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	UNIT
Collector-Base Voltage	VCBO				-80	V
Collector-Emitter Voltage	VCEO				-60	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current - Continuous	IC				-1	A
Collector Current - Peak	ICM				-2	A
Power Dissipation	PD	*1			500	mW
Thermal Resistance Junction-to-Air	RJA	*2			191	C/W
Thermal Resistance Junction-to-Case	RJC	*2			74	C/W
Thermal Resistance Junction-to-Lead	RJL	*2			45	C/W
Junction and Storage Temperature	TJ, TSTG		-55		+150	C
Collector-base breakdown voltage	V(BR)CBO	IC=-100A,IE=0	-80			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-10mA,IB=0	-60			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A,IC=0	-5			V
Collector cut-off current	ICBO	VCB=-60V,IE=0			-0.1	A
Emitter cut-off current	IEBO	VEB=-4V,IC=0			-0.1	A
DC current gain	hFE	VCE=-5V,IC=-1mA	100
		VCE=-5V,IC=-500mA	100
		VCE=-5V,IC=-1A	80
		VCE=-5V,IC=-2A	15
Collector-emitter saturation voltage	VCE(sat)	IC=-500mA, IB=-50mA		-0.3		V
Collector-emitter saturation voltage	VCE(sat)	IC=-1A, IB= -100mA		-0.6		V
Base-emitter saturation voltage	VBE(sat)	IC=-1A, IB= -100mA		-1.2		V
Base-emitter voltage	VBE	VCE=-5V,IC=-1A		-1		V
Transition frequency	fT	VCE=-10V, IC= -50mA, f=100MHz		150		MHz
Collector output capacitance	Cob	VCB=-10V,IE=0,f=1MHz			10	pF

2504101957_GOODWORK-FMMT591_C42186033.pdf

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