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General Purpose PNP Transistor JSMSEMI MMBT3906 Medium Power Amplification and Switching Applications

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General Purpose PNP Transistor JSMSEMI MMBT3906 Medium Power Amplification and Switching Applications

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 50nA

Pd - Power Dissipation : 250mW

Transition frequency(fT) : 250MHz

type : PNP

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -

Description : Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 250mW Surface Mount SOT-23

Mfr. Part # : MMBT3906

Model Number : MMBT3906

Package : SOT-23

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Product Overview

The MMBT3906 NP is a general-purpose PNP transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary NPN type, the MMBT3904, is also available. This transistor offers a collector current capability of -200mA and a low maximum voltage rating of -40V.

Product Attributes

Brand: JSMICRO Semiconductor
Model: MMBT3906 NP
Package Type: SOT-23

Technical Specifications

Symbol	Parameter	Conditions	Min.	Max.	Unit
Maximum Ratings
VCBO	Collector-base voltage	Open emitter	-	-40	V
VCEO	Collector-emitter voltage	Open base	-	-40	V
VEBO	Emitter-base voltage	Open collector	-	-6	V
IC	Collector current (DC)		-	-200	mA
ICM	Peak collector current		-	-200	mA
IBM	Peak base current		-	-100	mA
Ptot	Total power dissipation	Tamb25C		250	mW
Tstg	Storage temperature		-65	+150	C
Tj	Junction temperature			150	C
Electrical Characteristics
ICBO	Collector cut-off current	IE = 0; VCB = -30 V	-	-50	nA
IEBO	Emitter cut-off current	IC = 0; VEB =- 6 V	-	-50	nA
hFE	DC current gain	VCE = -1V; IC= -0.1mA	60	300
		IC = -1mA	80	-
		IC = -10mA	100	-
		IC = -50mA	60	-
		IC = -100mA	30	-
VCEsat	Collector-emitter saturation voltage	IC = -10mA; IB = -1mA	-	-200	mV
VCEsat	Collector-emitter saturation voltage	IC = -50mA; IB = -5mA	-	-300	mV
VBEsat	Base-emitter saturation voltage	IC = -10mA; IB = -1mA	-	-850	mV
VBEsat	Base-emitter saturation voltage	IC = -50mA; IB = -5mA	-	-950	mV
Cc	Collector capacitance	IE = Ie= 0; VCB = -5 V; f = 1 MHz	-	4.5	pF
Ce	Emitter capacitance	IC = Ic= 0; VEB = -500 mV; f = 1 MHz	-	10	pF
fT	Transition frequency	IC = -10mA; VCE = -20 V; f = 100MHz	250	-	MHz
NF	Noise figure	IC = -100A; VCE = -5V; RS = 1 k;f = 10Hz to15.7 kHz	-	4	dB
Switching times	ton (Turn-on time)	ICon= -10mA; IBon = -1mA; IBoff= -1mA	-	65	ns
	td (delay time)		-	35	ns
	tr (rise time)		-	35	ns
	toff (turn-off time)		-	300	ns
	ts (storage time)		-	225	ns
	tf (fall time)		-	75	ns

2306301522_JSMSEMI-MMBT3906_C916375.pdf

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