Home > Single Bipolar Transistors >

High Voltage NPN Transistor JSMSEMI MMBTA42 Featuring SOT23 Package and Complementary MMBTA92

Product Categories

Bipolar Transistor Arrays [120]
Single IGBTs [586]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

High Voltage NPN Transistor JSMSEMI MMBTA42 Featuring SOT23 Package and Complementary MMBTA92

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 350mW

Transition frequency(fT) : 50MHz

type : -

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 200V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor 200V 500mA 50MHz 350mW Surface Mount SOT-23

Mfr. Part # : MMBTA42

Model Number : MMBTA42

Package : SOT-23

Contact Now

Product Overview

The MMBTA42 is an NPN Silicon High Voltage Transistor designed for high voltage switching and amplifier applications. It offers complementary PNP types with the MMBTA92.

Product Attributes

Brand: JSMICRO Semiconductor
Package: SOT-23 Plastic Package
Complementary Type: MMBTA92 (PNP)

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector Base Voltage	VCBO	200	V
Collector Emitter Voltage	VCEO	200	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	500	mA
Power Dissipation	Ptot	350	mW	Ta = 25 OC
Thermal Resistance Junction to Ambient	RJA	357	OC/W
Junction and Storage Temperature Range	Tj, Tstg	-55 to +150	OC
DC Current Gain	hFE	25	-	VCE = 10 V, IC = 1 mA
DC Current Gain	hFE	40	-	VCE = 10 V, IC = 10 mA
DC Current Gain	hFE	40	-	VCE = 10 V, IC = 30 mA
Collector Base Cutoff Current	ICBO	0.1	A	VCB = 160 V
Emitter Base Cutoff Current	IEBO	0.1	A	VEB = 6 V
Collector Emitter Saturation Voltage	VCE(sat)	0.5	V	IC = 20 mA, IB = 2 mA
Base Emitter Saturation Voltage	VBE(sat)	0.9	V	IC = 20 mA, IB = 2 mA
Gain Bandwidth Product	fT	50	MHz	VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector Output Capacitance	Cob	4	pF	VCB = 20 V, f = 1 MHz

2308071512_JSMSEMI-MMBTA42_C916394.pdf

Buy cheap High Voltage NPN Transistor JSMSEMI MMBTA42 Featuring SOT23 Package and Complementary MMBTA92 product

High Voltage NPN Transistor JSMSEMI MMBTA42 Featuring SOT23 Package and Complementary MMBTA92 Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!