| Sign In | Join Free | My xxjcy.com |
|
Emitter-Base Voltage(Vebo) : 5V
Current - Collector Cutoff : 500uA
Pd - Power Dissipation : 250W
Transition frequency(fT) : 4MHz
type : NPN
Current - Collector(Ic) : 16A
Collector - Emitter Voltage VCEO : 200V
Operating Temperature : -
Description : Bipolar (BJT) Transistor NPN 200V 16A 4MHz 250W Through Hole TO-3
Mfr. Part # : MJ15022G-JSM
Model Number : MJ15022G-JSM
Package : TO-3
The MJ15022/15024G are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature an excellent safe operating area and high DC current gain. These transistors are complements to the MJ15023G and MJ15025G types and come in a TO-3 package.
| Symbol | Parameter | Conditions | MJ15022G | MJ15024G | Unit |
| VCEO(SUS) | Collector-emitter sustaining voltage | IC=0.1A ;IB=0 | 200 | 250 | V |
| VCEsat-1 | Collector-emitter saturation voltage | IC=8A; IB=0.8A | 1.4 | V | |
| VCEsat-2 | Collector-emitter saturation voltage | IC=16A; IB=3.2A | 4.0 | V | |
| VBE | Base-emitter on voltage | IC=8A ; VCE=4V | 2.2 | V | |
| ICEO | Collector cut-off current | VCE=150V; IB=0 | 200 | - | mA |
| VCE=200V; IB=0 | - | 0.5 | mA | ||
| ICEX | Collector cut-off current | VCE=200V; VBE(off)=1.5V | - | 0.25 | mA |
| VCE=250V; VBE(off)=1.5V | - | 0.25 | mA | ||
| IEBO | Emitter cut-off current | VEB=5V; IC=0 | 0.5 | mA | |
| hFE-1 | DC current gain | IC=8A ; VCE=4V | 15-60 | ||
| IC=8A ; VCE=4V | 15 | - | |||
| hFE-2 | DC current gain | IC=16A ; VCE=4V | 5 | ||
| Is/b | Second breakdown collector current with base forward biased | VCE=50Vdc,t=0.5 s | 5.0 | A | |
| VCE=80Vdc,t=0.5 s,Nonrepetitive | 2.0 | A | |||
| COB | Output capacitance | IE=0 ; VCB=10V;f=1.0MHz | 500 | pF | |
| fT | Transition frequency | IC=1A ; VCE=10V;f=1.0MHz | 4 | MHz | |
| Rth j-c | Thermal resistance junction to case | 0.70 | /W | ||
|
|
High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioners and audio circuits Images |