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High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioners and audio circuits

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High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioners and audio circuits

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 500uA

Pd - Power Dissipation : 250W

Transition frequency(fT) : 4MHz

type : NPN

Current - Collector(Ic) : 16A

Collector - Emitter Voltage VCEO : 200V

Operating Temperature : -

Description : Bipolar (BJT) Transistor NPN 200V 16A 4MHz 250W Through Hole TO-3

Mfr. Part # : MJ15022G-JSM

Model Number : MJ15022G-JSM

Package : TO-3

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Product Overview

The MJ15022/15024G are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature an excellent safe operating area and high DC current gain. These transistors are complements to the MJ15023G and MJ15025G types and come in a TO-3 package.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Package Type: TO-3

Technical Specifications

SymbolParameterConditionsMJ15022GMJ15024GUnit
VCEO(SUS)Collector-emitter sustaining voltageIC=0.1A ;IB=0200250V
VCEsat-1Collector-emitter saturation voltageIC=8A; IB=0.8A1.4V
VCEsat-2Collector-emitter saturation voltageIC=16A; IB=3.2A4.0V
VBEBase-emitter on voltageIC=8A ; VCE=4V2.2V
ICEOCollector cut-off currentVCE=150V; IB=0200-mA
VCE=200V; IB=0-0.5mA
ICEXCollector cut-off currentVCE=200V; VBE(off)=1.5V-0.25mA
VCE=250V; VBE(off)=1.5V-0.25mA
IEBOEmitter cut-off currentVEB=5V; IC=00.5mA
hFE-1DC current gainIC=8A ; VCE=4V15-60
IC=8A ; VCE=4V15-
hFE-2DC current gainIC=16A ; VCE=4V5
Is/bSecond breakdown collector current with base forward biasedVCE=50Vdc,t=0.5 s5.0A
VCE=80Vdc,t=0.5 s,Nonrepetitive2.0A
COBOutput capacitanceIE=0 ; VCB=10V;f=1.0MHz500pF
fTTransition frequencyIC=1A ; VCE=10V;f=1.0MHz4MHz
Rth j-cThermal resistance junction to case0.70/W

2401121850_JSMSEMI-MJ15022G-JSM_C20606852.pdf


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