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Power Transistor JSMSEMI MJE340G NPN Type with 100 DC Current Gain and 1 Volt Collector Saturation Voltage

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Power Transistor JSMSEMI MJE340G NPN Type with 100 DC Current Gain and 1 Volt Collector Saturation Voltage

Emitter-Base Voltage(Vebo) : 3V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 20W

type : NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 300V

Description : Bipolar (BJT) Transistor NPN 300V 500mA 20W Through Hole TO-126

Mfr. Part # : MJE340G

Model Number : MJE340G

Package : TO-126

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Product Overview

The MJE340G is an NPN Power Transistor designed for high voltage and general purpose applications. It features a Collector-Emitter Sustaining Voltage of 300V (Min), a DC Current Gain of 100 (Min) @ IC=50mA, and a low Collector Saturation Voltage of 1.0V (Max.) @ IC=50mA. It is a complement to the PNP MJE350.

Product Attributes

Brand: JSMICRO Semiconductor
Model: MJE340G
Type: NPN Power Transistor

Technical Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 1.0mA; IB= 0	300		V
V(BR)CBO	Collector-Base Breakdown Voltage	IC= 1.0mA; IE= 0	300		V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE= 1.0mA; IC= 0		3	V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 50mA ;IB= 5mA		1.0	V
ICBO	Collector Cutoff Current	VCB= 300V; IE= 0		0.1	mA
IEBO	Emitter Cutoff Current	VEB= 3V; IC= 0		0.1	mA
hFE	DC Current Gain	IC= 50m A ; VCE= 10V	100	240
VCBO	Collector-Base Voltage			300	V
VCEO	Collector-Emitter Voltage			300	V
VEBO	Emitter-Base Voltage			3	V
IC	Collector Current-Continuous			0.5	A
PC	Collector Power Dissipation	TC=25		20	W
Tj	Junction Temperature			150
Tstg	Storage Temperature Range		-65	150
Rth j-c	Thermal Resistance,Junction to Case			6.25	/W

2409302232_JSMSEMI-MJE340G_C5296719.pdf

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