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Switching Amplification Transistor Diodes FZT605TA NPN Darlington with High Gain and RoHS Compliance

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Switching Amplification Transistor Diodes FZT605TA NPN Darlington with High Gain and RoHS Compliance

Current - Collector Cutoff : 10uA

Pd - Power Dissipation : 2W

DC Current Gain : 2000

Transition frequency(fT) : 150MHz

type : NPN

Current - Collector(Ic) : 1.5A

Collector - Emitter Voltage VCEO : 120V

Operating Temperature : -55℃~+150℃@(Tj)

Description : 2W 2000 NPN 1.5A 120V SOT-223 Single Bipolar Transistors RoHS

Mfr. Part # : FZT605TA

Model Number : FZT605TA

Package : SOT-223

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Diodes Incorporated FZT605 NPN Darlington Transistor

The Diodes Incorporated FZT605 is a high-performance NPN Darlington transistor designed for various switching and amplification applications. It offers a high continuous collector current of 1.5A and a significant voltage rating of 120V CEO, making it suitable for driving loads such as lamps, relays, and solenoids. Key advantages include its high gain (hFE > 2k @ 1A) and lead-free, RoHS-compliant construction, aligning with environmental standards.

Product Attributes

Brand: Diodes Incorporated
Package: SOT223 (Type DN)
Material: Molded Plastic, "Green" Molding Compound
Color: "Green" Device (Halogen and Antimony Free)
Certifications: RoHS Compliant

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
Collector-Base Breakdown Voltage	BVCBO	140	-	-	V	IC = 100A
Collector-Emitter Breakdown Voltage	BVCEO	120	-	-	V	IC = 1mA
Emitter-Base Breakdown Voltage	BVEBO	14	-	-	V	IE = 100A
Collector-Base Cut-Off Current	ICBO	-	-	100	nA	VCB = 120V
Collector-Base Cut-Off Current	ICBO	-	-	10	A	VCB = 120V, TA = +120C
Collector-Emitter Cut-Off Current	ICES	-	-	100	nA	VCE = 120V
Emitter Cut-Off Current	IEBO	-	-	100	nA	VEB = 8V
DC Current Gain	hFE	2,000	5,000	-	-	IC = 50mA, VCE = 5V
DC Current Gain	hFE	2,000	-	-	-	IC = 1A, VCE = 5V
Collector-Emitter Saturation Voltage	VCE(sat)	-	-	1	V	IC = 250mA, IB = 0.25mA
Collector-Emitter Saturation Voltage	VCE(sat)	-	-	1.5	V	IC = 1A, IB = 1mA
Base-Emitter Saturation Voltage	VBE(sat)	-	-	1.8	V	IC = 1A, IB = 1mA
Base-Emitter Turn-On Voltage	VBE(on)	-	-	1.7	V	IC = 1A, VCE = 5V
Input Capacitance	Cibo	-	90	-	pF	VEB = 0.5V, f = 1MHz
Output Capacitance	Cobo	-	15	-	pF	VCB = 10V, f = 1MHz
Current Gain-Bandwidth Product	fT	150	-	-	MHz	VCE = 10V, IC = 100mA, f = 20MHz
Turn-On Time	ton	-	0.5	-	s	VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA
Turn-Off Time	toff	-	1.6	-	s	VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA

2412251006_DIODES-FZT605TA_C155225.pdf

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