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High Current NPN Darlington Transistor DIODES FZT600TA Featuring SOT223 Package and Green Compliance

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High Current NPN Darlington Transistor DIODES FZT600TA Featuring SOT223 Package and Green Compliance

Current - Collector Cutoff : -

Pd - Power Dissipation : 2W

DC Current Gain : 2000

Transition frequency(fT) : 250MHz

type : NPN

Current - Collector(Ic) : 2A

Collector - Emitter Voltage VCEO : 140V

Operating Temperature : -55℃~+150℃@(Tj)

Description : 2W 2000 NPN 2A 140V SOT-223 Single Bipolar Transistors RoHS

Mfr. Part # : FZT600TA

Model Number : FZT600TA

Package : SOT-223

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FZT600 / FZT600B 140V NPN Darlington Transistor in SOT223

The FZT600/FZT600B are high-performance NPN Darlington transistors designed for applications requiring high voltage and high current capabilities. These devices offer a high continuous collector current of 2A and a significant DC current gain greater than 10k, guaranteed up to 1A. Their robust construction and AEC-Q101 qualification ensure high reliability, making them suitable for demanding electronic circuits. The SOT223 package provides efficient heat dissipation and ease of integration into PCB designs.

Product Attributes

Brand: Diodes Incorporated
Package: SOT223 (Type DN)
Material: Molded Plastic, "Green" Molding Compound
Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to AEC-Q101 Standards
Lead Finish: Matte Tin Plated

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
Absolute Maximum Ratings
Collector-Base Voltage	VCBO			160	V	@TA = +25C
Collector-Emitter Voltage	VCEO			140	V	@TA = +25C
Emitter-Base Voltage	VEBO			10	V	@TA = +25C
Continuous Collector Current	IC			2	A	@TA = +25C
Peak Pulse Current	ICM			4	A	@TA = +25C
Electrical Characteristics
Collector-Base Breakdown Voltage	BVCBO	160			V	IC = 100A
Collector-Emitter Breakdown Voltage	BVCEO	140			V	IC = 10mA
Emitter-Base Breakdown Voltage	BVEBO	10			V	IE = 100A
Collector-Base Cut-Off Current	ICBO			0.01	A	VCB = 140V
Collector-Emitter Cut-Off Current	ICES			10	A	VCES = 140V
DC Current Gain (FZT600)	hFE	1000	100,000			IC = 50mA, VCE = 10V
DC Current Gain (FZT600B)	hFE	5000	100,000			IC = 500mA, VCE = 10V
Collector-Emitter Saturation Voltage	VCE(sat)		0.75	1.2	V	IC = 1A, IB = 10mA
Base-Emitter Saturation Voltage	VBE(sat)		1.7	1.9	V	IC = 1A, IB = 10mA
Output Capacitance	Cobo		10	15	pF	VCB = 10V, f = 1MHz
Current Gain-Bandwidth Product	fT	150	250		MHz	VCE = 10V, IC = 100mA, f=20MHz
Turn-On Time	ton		0.75		s	VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA
Turn-Off Time	toff		2.20		s	VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA

2412251006_DIODES-FZT600TA_C154767.pdf

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