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Switching and amplification transistor GOODWORK MMDT3906DW epitaxial planar die construction SOT363

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Switching and amplification transistor GOODWORK MMDT3906DW epitaxial planar die construction SOT363

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 50nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 250MHz

type : PNP

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 40V 0.2A 250MHz 0.2W Surface Mount SOT-363

Mfr. Part # : MMDT3906DW

Model Number : MMDT3906DW

Package : SOT-363

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Product Overview

The MMDT3906DW is an epitaxial planar die construction transistor ideal for low power amplification and switching applications. It is housed in a SOT-363 package.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic-Encapsulate
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-40	V
Collector-Emitter Voltage	VCEO				-40	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current -Continuous	IC				-0.2	A
Collector Power Dissipation	PC	Ta=25			0.2	W
Thermal Resistance. Junction to Ambient Air	RJA			625		/W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150
Collector-base breakdown voltage	V(BR)CBO	IC=-10A,IE=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA,IB=0	-40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A,IC=0	-5			V
Collector cut-off current	ICEX	VCE=-30V,VEB(OFF)=-3V			-50	nA
Base cut-off current	IEBO	VEB=-5V,IC=0			-50	nA
DC current gain	hFE(1)	VCE=-1V,IC=-0.1mA	60
	hFE(2)	VCE=-1V,IC=-1mA	80
	hFE(3)	VCE=-1V,IC=-10mA	100		300
	hFE(4)	VCE=-1V,IC=-50mA	60
	hFE(5)	VCE=-1V,IC=-100mA	30
Collector-emitter saturation voltage	VCE(sat)1	IC=-10mA,IB=-1mA			-0.25	V
Collector-emitter saturation voltage	VCE(sat)2	IC=-50mA,IB=-5mA			-0.4	V
Base-emitter saturation voltage	VBE(sat)1	IC=-10mA,IB=-1mA		-0.65	-0.85	V
Base-emitter saturation voltage	VBE(sat)2	IC=-50mA,IB=-5mA			-0.95	V
Transition frequency	fT	VCE=-20V,IC=-10mA,f=100MHz		250		MHz
Collector output capacitance	Cob	VCB=-5V,IE=0,f=1MHz			4.5	pF
Noise figure	NF	VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1K			4	dB
Delay time	td	VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA		35		nS
Rise time	tr	VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA		35		nS
Storage time	tS	VCC=-3V, IC=-10mA IB1=-IB2=- 1mA		225		nS
Fall time	tf	VCC=-3V, IC=-10mA IB1=-IB2=- 1mA		75		nS

2410121546_GOODWORK-MMDT3906DW_C22470865.pdf

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