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Mobile communication VCO tuning diode Infineon BBY53-05WH6327 with high ratio at low reverse voltage

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Mobile communication VCO tuning diode Infineon BBY53-05WH6327 with high ratio at low reverse voltage

Capacitance Ratio : 2.2@C1V/C3V

DC Reverse Voltage(Vr) : 6V

Diode Configuration : 1 Pair Common Cathode

Diode Capacitance : -

Description : 2.2@C1V/C3V 6V 1 Pair Common Cathode SOT-323-3 Variable Capacitance (Varicaps, Varactors) RoHS

Mfr. Part # : BBY53-05WH6327

Model Number : BBY53-05WH6327

Package : SOT-323-3

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Product Overview

The BBY53 is a high Q hyperabrupt tuning diode designed for low tuning voltage operation in VCOs for mobile communications equipment. It offers a high ratio at low reverse voltage and is available in a Pb-free (RoHS compliant) package.

Product Attributes

Brand: Infineon Technologies
Certification: Pb-free (RoHS compliant)

Technical Specifications

Model	Type	Package	Configuration	LS (nH)	Marking
BBY53	common cathode	SOT23	TSLP-2-1	2	S7s
BBY53-02L	single, leadless	SOT23	SC79	0.4	LL
BBY53-02V	single	SOT23	SCD80	0.6	L
BBY53-02W	single	SOT23	SOD323	0.6	LL
BBY53-03W	single	SOT23	SOT323	1.8	white
BBY53-05W	common cathode	SOT23	TSLP-2-1	1.4	5

Parameter	Symbol	Value	Unit
Diode reverse voltage	VR	6	V
Forward current	IF	20	mA
Operating temperature range	Top	-55 ... 125	C
Storage temperature	Tstg	-55 ... 150	C
Reverse current (VR = 4 V)	IR	-	10 nA
Reverse current (VR = 4 V, TA = 85 C)	IR	-	200 nA
Diode capacitance (VR = 1 V, f = 1 MHz)	CT	4.8	pF
Diode capacitance (VR = 3 V, f = 1 MHz)	CT	1.85	pF
Diode capacitance (VR = 1 V, f = 1 MHz)	CT	5.3	pF
Diode capacitance (VR = 3 V, f = 1 MHz)	CT	2.4	pF
Diode capacitance (VR = 1 V, f = 1 MHz)	CT	5.8	pF
Diode capacitance (VR = 3 V, f = 1 MHz)	CT	3.1	pF
Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz)	CT1/CT3	1.8	-
Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz)	CT1/CT3	2.2	-
Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz)	CT1/CT3	2.6	-
Series resistance (VR = 1 V, f = 1 GHz)	rS	0.47

2410121845_Infineon-BBY53-05WH6327_C3272487.pdf

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