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Industrial motor control and lighting triac YONGYUTAI BT136S-800E with high bidirectional transient voltage capability

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Industrial motor control and lighting triac YONGYUTAI BT136S-800E with high bidirectional transient voltage capability

Holding Current (Ih) : 20mA

Current - Gate Trigger(Igt) : 10mA

Voltage - On State(Vtm) : 1.7V

Average Gate Power Dissipation (PG(AV)) : 500mW

Current - On State(It(RMS)) : 4A

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 27A

SCR Type : 1 TRIAC

Gate Trigger Voltage (Vgt) : 1.5V

Description : 20mA 10mA 800V 1 TRIAC TO-252 TRIACs RoHS

Mfr. Part # : BT136S-800E

Model Number : BT136S-800E

Package : TO-252

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Product Overview

Glass passivated triacs designed for high bidirectional transient and blocking voltage capability, along with excellent thermal cycling performance. Ideal for motor control, industrial and domestic lighting, heating, and static switching applications.

Product Attributes

Brand: BT136S-xxxE
Type: Snubberless™ and logic level (3 Quadrants) / Standard (4 Quadrants)
Encapsulation: Plastic

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Repetitive peak off-state voltages	VRRM VDRM			-500	500	V
				-600	600
				-800	800
On-State RMS Current	IT(RMS)	full sine wave; Tmb ≤ 107 °C			4	A
Non-repetitive peak on-state current	ITSM	full sine wave; Tj = 25 °C prior to surge	t = 20 ms		25	A
		t = 16.7 ms			27	A
I2t for fusing	I2t	t = 10 ms			3.1	A2s
Repetitive rate of rise of on-state current after triggering	dIT/dt	ITM = 3 A; IG = 0.2 A; dIG/dt = 0.2 A/µs		50		A/µs
Peak gate current	IGM				2	A
Peak Gate Voltage	VGM				5	V
Peak gate power	PGM				5	W
Average gate power	PG(AV)	over any 20 ms period			0.5	W
Operating junction temperature	TJ				125	°C
Storage Temperature	Tstg		-40		150	°C
Thermal resistance junction to solder point	Rth j-sp	full or half cycle		3.0		K/W
Thermal resistance junction to solder point	Rth j-sp	full or half cycle		3.0		K/W
Thermal resistance junction to ambient	Rth j-a	pcb mounted;		75		K/W
Thermal resistance junction to ambient	Rth j-a	pcb mounted;		75		K/W
Gate trigger current	IGT	VD = 12 V, IT = 0.1 A	--		10	mA
		VD = 12 V, IGT = 0.1 A	-		15	mA
Latching current	IL	VD = 12 V, IGT = 0.1 A			20	mA
Holding current	IH	VD = 12 V, IGT = 0.1 A	-		15	mA
				20		mA
On-state voltage	VT	IT = 5A		1.4	1.7	V
Gate trigger voltage	VGT	VD = 12 V; IT = 0.1 A		0.7	1.5	V
		VD = 400 V; IT = 0.1 A; Tj = 125 °C		0.25	0.4	V
Off-state leakage current	ID	VD = VDRM(max); Tj = 125 °C			0.5	mA
Critical rate of rise of off-state voltage	dVD/dt	VDM =67% VDRM(max); Tj = 125 °C exponential waveform; gate open circuit		50		V/µs
Gate controlled turn-on time	tgt	ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs;			2	µs

2508111740_YONGYUTAI-BT136S-800E_C50201832.pdf

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