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Triac semiconductor device WEIDA Z0105-NN with 1A RMS on state current and 800V peak off state voltage

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Triac semiconductor device WEIDA Z0105-NN with 1A RMS on state current and 800V peak off state voltage

Holding Current (Ih) : 5mA

Current - Gate Trigger(Igt) : 7mA

Voltage - On State(Vtm) : 1.5V

Average Gate Power Dissipation (PG(AV)) : 500mW

Current - On State(It(RMS)) : 1A

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 16A

SCR Type : 1 SCR

Gate Trigger Voltage (Vgt) : 1.3V

Operating Temperature : -40℃~+125℃

Description : SCR 800V 1A Surface Mount SOT-223

Mfr. Part # : Z0105-NN

Model Number : Z0105-NN

Package : SOT-223

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Product Overview

The Z01 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed with low holding and latching current, making them ideal for medium and small resistance type power loads. These triacs offer reliable performance with key features such as a 1A RMS on-state current and repetitive peak off-state voltages of up to 800V.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Origin: Jiangsu
Product Series: Z01 Series
Revision: 3.0
Year: 2020

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Storage junction temperature range	Tstg	-40~150
Operating junction temperature range	Tj	-40~125
Repetitive peak off-state voltage	VDRM/VRRM	600/800	V	(Tj=25)
RMS on-state current	IT(RMS)	1	A
Non repetitive surge peak on-state current	ITSM	16	A	(full cycle, F=50Hz)
I2t value for fusing	I2t	1.28	A2s	(tp=10ms)
Critical rate of rise of on-state current	dI/dt	50	A/s	(IG=2IGT) I--, 10 A/s IV
Peak gate current	IGM	2	A
Average gate power dissipation	PG(AV)	0.5	W
Peak gate power	PGM	5	W
Gate Trigger Current	IGT	3/5/10/25 (MAX)	mA	VD=12V, RL=33, Quadrant Z01xx 03/05/09/10
Gate Trigger Voltage	VGT	1.3 (MAX)	V	Quadrant ---
Gate Non-Trigger Voltage	VGD	0.2 (MIN)	V	VD=VDRM, Quadrant ---
Holding Current	IH	3/5/10/20 (MAX)	mA	IT=100mA, Quadrant Z01xx 03/05/09/10
Latching Current	IL	6/8/10/20 (MAX)	mA	IG=1.2IGT, Quadrant --; 10/12/15/35 (MAX) Quadrant
Critical dV/dt	dV/dt	10/20/50/100 (MIN)	V/s	VD=0.66VDRM, Tj=125, Gate open
On-state voltage	VTM	1.5 (MAX)	V	ITM=1.4A, tp=380s, Tj=25
Off-state current	IDRM/IRRM	5 (MAX)	A	VDRM=VRRM, Tj=25; 0.5 mA Tj=125
Junction to Case Thermal Resistance	Rth(j-c)	60	/W	(AC) TO-92
Junction to Case Thermal Resistance	Rth(j-c)	31	/W	(AC) SOT-89/SOT-223, SOT-89-2L/SOT-223-2L

2410122017_WEIDA-Z0105-NN_C2900982.pdf

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