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Durable Ultra Fast Recovery Diode amsem MUR160SB with UL 94 V 0 Flammability Rated Molding Compound

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Durable Ultra Fast Recovery Diode amsem MUR160SB with UL 94 V 0 Flammability Rated Molding Compound

Reverse Leakage Current (Ir) : 5uA

Non-Repetitive Peak Forward Surge Current : 30A

Reverse Recovery Time (trr) : 50ns

Operating Junction Temperature Range : -55℃~+150℃

Voltage - DC Reverse (Vr) (Max) : 600V

Diode Configuration : Independent

Voltage - Forward(Vf@If) : 1.3V@1A

Current - Rectified : 1A

Description : 30A 50ns 600V Independent 1.3V@1A 1A SMB Single Diodes RoHS

Mfr. Part # : MUR160SB

Model Number : MUR160SB

Package : SMB

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Product Overview

The MUR160SB is an Ultra-Fast Recovery Rectifier Diode (FRED) from Anhui Anmei Semiconductor Co., Ltd. It features low power loss, ultra-fast recovery time for high efficiency, glass passivated chip junction, low leakage current, and high forward surge capability. It is designed for high frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment. The device meets MSL level 1 per J-STD-020 with a maximum peak of 260 C.

Product Attributes

  • Brand: Anhui Anmei Semiconductor Co.,Ltd.
  • Product Line: MUR160SB
  • Certifications: MSL level 1 (per J-STD-020), UL 94 V-0 flammability rating (Molding compound), RoHS-compliant
  • Package: DO-214AA (SMB)
  • Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
  • Polarity: Color band denotes cathode end

Technical Specifications

ParameterSymbolUnitConditionsMUR160SB
Repetitive Peak Reverse VoltageVRRMV600
Average Forward CurrentIF(AV)ATa=251.0
Surge (Non-repetitive) Forward CurrentIFSMATa=25, 60Hz Half-sine wave, 1 cycle30
Storage TemperatureTstg-55 ~ +150
Junction TemperatureTj-55 ~ +150
Peak Forward VoltageVFMVIF=1.0A1.3
Peak Reverse CurrentIRRM1AVRM=VRRM, Ta=255.0
Peak Reverse CurrentIRRM2ATa=125300
Reverse Recovery TimeTrrnsIF =0.5A, IR =1A, IRR =0.25A50
Thermal Resistance (Typical)RJ-L/WBetween junction and ambient20
Typical Junction CapacitanceCjpFMeasured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C25
Non-repetitive Reverse Avalanche EnergyERmJI(BR)R = 0.7 A, inductive load10

2410121959_amsem-MUR160SB_C18336927.pdf


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