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Reverse Leakage Current (Ir) : 5uA
Non-Repetitive Peak Forward Surge Current : 30A
Reverse Recovery Time (trr) : 50ns
Operating Junction Temperature Range : -55℃~+150℃
Voltage - DC Reverse (Vr) (Max) : 600V
Diode Configuration : Independent
Voltage - Forward(Vf@If) : 1.3V@1A
Current - Rectified : 1A
Description : 30A 50ns 600V Independent 1.3V@1A 1A SMB Single Diodes RoHS
Mfr. Part # : MUR160SB
Model Number : MUR160SB
Package : SMB
The MUR160SB is an Ultra-Fast Recovery Rectifier Diode (FRED) from Anhui Anmei Semiconductor Co., Ltd. It features low power loss, ultra-fast recovery time for high efficiency, glass passivated chip junction, low leakage current, and high forward surge capability. It is designed for high frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment. The device meets MSL level 1 per J-STD-020 with a maximum peak of 260 C.
| Parameter | Symbol | Unit | Conditions | MUR160SB |
| Repetitive Peak Reverse Voltage | VRRM | V | 600 | |
| Average Forward Current | IF(AV) | A | Ta=25 | 1.0 |
| Surge (Non-repetitive) Forward Current | IFSM | A | Ta=25, 60Hz Half-sine wave, 1 cycle | 30 |
| Storage Temperature | Tstg | -55 ~ +150 | ||
| Junction Temperature | Tj | -55 ~ +150 | ||
| Peak Forward Voltage | VFM | V | IF=1.0A | 1.3 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta=25 | 5.0 |
| Peak Reverse Current | IRRM2 | A | Ta=125 | 300 |
| Reverse Recovery Time | Trr | ns | IF =0.5A, IR =1A, IRR =0.25A | 50 |
| Thermal Resistance (Typical) | RJ-L | /W | Between junction and ambient | 20 |
| Typical Junction Capacitance | Cj | pF | Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C | 25 |
| Non-repetitive Reverse Avalanche Energy | ER | mJ | I(BR)R = 0.7 A, inductive load | 10 |
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Durable Ultra Fast Recovery Diode amsem MUR160SB with UL 94 V 0 Flammability Rated Molding Compound Images |