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Silicon Carbide Schottky Diode Bestirpower BCA65S40D4 650V 40A for Solar Inverters and Data Centers

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Silicon Carbide Schottky Diode Bestirpower BCA65S40D4 650V 40A for Solar Inverters and Data Centers

Reverse Leakage Current (Ir) : 10nA@650V

Voltage - Forward(Vf@If) : 1.6V@40A

Current - Rectified : 40A

Description : 1.6V@40A 40A TO-247-2 Single Diodes RoHS

Mfr. Part # : BCA65S40D4

Model Number : BCA65S40D4

Package : TO-247-2

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Product Overview

The BCA65S40D4 is a 650V, 40A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC diode technology. It offers excellent low forward voltage and robustness, making it suitable for applications demanding high power efficiency. Key benefits include negligible reverse recovery, high-speed switching, and temperature-independent switching, contributing to reduced system size and cost, and high reliability. This diode is ideal for switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies.

Product Attributes

Brand: Bestirpower
Material: Silicon Carbide (SiC)
Technology: Schottky Diode
Compliance: RoHS compliant

Technical Specifications

Symbol	Parameter	Test Conditions	Value	Unit
VRRM	Repetitive Peak Reverse Voltage		650	V
IF	Forward Current	TC = 25	81	A
IF	Forward Current	TC = 135	42	A
IF	Forward Current	TC = 138	40	A
IF,SM	Non-Repetitive Forward Surge Current	TC = 25, tp = 10 ms	243	A
IF,SM	Non-Repetitive Forward Surge Current	TC = 110, tp = 10 ms	159	A
IF,RM	Repetitive Peak Forward Surge Current	TC = 25, tp = 10 ms	219	A
I2dt	I2t value	TC = 25, tp = 10 ms	295	As
I2dt	I2t value	TC = 110, tp = 10 ms	126	As
Ptot	Power Dissipation	TC = 25	363	W
Ptot	Power Dissipation	TC = 110	157	W
Ptot	Power Dissipation	TC = 150	61	W
TJ,TSTG	Operating Junction and Storage Temperature		-55 to +175
RJC	Thermal Resistance, Junction to Case	Typ.	0.413	/W
VDC	DC blocking voltage		650	V
VF	Forward Voltage	IF=20A, TJ=25	1.60 (Typ)	V
VF	Forward Voltage	IF=20A, TJ=175	2.23 (Typ)	V
IR	Reverse Current	VR = 650 V, TJ= 25	0.01 (Typ)	A
IR	Reverse Current	VR = 650 V, TJ= 175	1 (Typ)	A
QC	Total Capacitive Charge	VR = 400 V, TJ = 25	91 (Typ)	nC
C	Total Capacitance	VR = 0 V, f = 1MHz	1700 (Typ)	pF
C	Total Capacitance	VR = 200 V, f = 1MHz	171 (Typ)	pF
C	Total Capacitance	VR = 400 V, f = 1MHz	161 (Typ)	pF
EC	Capacitance Stored Energy	VR = 400 V, TC = 25	22 (Typ)	J
Model	Top Marking	Package	Packing Method	Quantity
BCA65S40D4	BCA65S40D4	TO247-2	Tube	30 units

2512111635_Bestirpower-BCA65S40D4_C53152691.pdf

Silicon Carbide Schottky Diode Bestirpower BCA65S40D4 650V 40A for Solar Inverters and Data Centers Images

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