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TOSHIBA TBD62783AFWGZ EHZ 8 Channel DMOS Transistor Array for Industrial Switching Applications

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TOSHIBA TBD62783AFWGZ EHZ 8 Channel DMOS Transistor Array for Industrial Switching Applications

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 50V

Operating Temperature : -40℃~+85℃

Description : 500mA 50V SOP-18 Bipolar Transistor Arrays RoHS

Mfr. Part # : TBD62783AFWG(Z,EHZ)

Model Number : TBD62783AFWG(Z,EHZ)

Package : SOP-18

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TBD62783APG/FG/FNG/FWG 8-Channel Source Type DMOS Transistor Array

The TBD62783A series is an 8-circuit DMOS transistor array featuring built-in clamp diodes for switching inductive loads. This series is designed for high voltage and high current applications, offering reliable performance for various driving needs.

Product Attributes

Brand: TOSHIBA
Origin: Silicon Monolithic
Material: DMOS Transistor Array

Technical Specifications

Model	Package	Max Output Voltage (VOUT)	Max Output Current (IOUT) (per channel)	Input Voltage (Output ON) (MIN)	Input Voltage (Output OFF) (MAX)	Weight (Typ.)
TBD62783APG	P-DIP18-300-2.54-001	50 V	-500 mA	2.0 V	0.6 V	1.3 g
TBD62783AFG	SOP18-P-375-1.27	50 V	-500 mA	2.0 V	0.6 V	0.41 g
TBD62783AFNG	SSOP18-P-225-0.65	50 V	-500 mA	2.0 V	0.6 V	0.09 g
TBD62783AFWG	P-SOP18-0812-1.27-001	50 V	-500 mA	2.0 V	0.6 V	0.48 g

Absolute Maximum Ratings

Characteristic	Symbol	Rating	Unit
Power supply voltage	VCC	-0.5 to 50	V
Output current (for each channel)	IOUT	-500	mA
Input voltage	VIN	-0.5 to 30	V
Clamp diode reverse voltage	VR	50	V
Clamp diode forward current	IF	500	mA
Power dissipation (PG)	PD	1.47 (Note1)	W
Power dissipation (FG)	PD	0.96 (Note2)	W
Power dissipation (FNG)	PD	0.96 (Note3)	W
Power dissipation (FWG)	PD	1.31 (Note4)	W
Operating temperature	Topr	-40 to 85	C
Storage temperature	Tstg	-55 to 150	C

Operating Ranges

Characteristic	Symbol	Condition	Min	Typ.	Max	Unit
Power supply voltage	VCC	IOUT = -100 mA	2.0	-	50	V
Input voltage (Output on)	VIN (ON)	IOUT = -100 mA or upper, VDS = 2.0 V	2.0	-	25	V
Input voltage (Output off)	VIN (OFF)	IOUT = -100 A or less, VDS = 2.0 V	0	-	0.6	V
Clamp diode forward current	IF		-	-	400	mA

Electrical Characteristics

Characteristics	Symbol	Test Circuit	Condition	Min	Typ.	Max	Unit
Output leakage current	Ileak	1	VCC = 50 V, VIN = 0 V	-	-	1.0	A
Output voltage (Output ON-resistance)	VDS (RON)	2	IOUT = -350 mA, VIN = 5.0 V, VCC = 5.0 V	-	0.56 (1.6)	1.14 (3.25)	V ()
Input current (Output on)	IIN (ON)	3	VIN = 2.0 V	-	-	0.1	mA
Input current (Output off)	IIN (OFF)	4	VIN = 0 V, Ta = 85C	-	-	1.0	A
Input voltage (Output on)	VIN (ON)	5	IOUT = -100 mA or upper, VDS = 2.0 V	-	-	2.0	V
Supply current (for each channel)	ICC	3	VIN = 2.0 V, VCC = 50 V, Output open	-	-	1.5	mA
Clamp diode reverse current	IR	6	VR = 50 V, Ta = 85C	-	-	1.0	A
Clamp diode forward voltage	VF	7	IF = 350 mA	-	-	2.0	V
Turnon delay	tON	8	VCC = 50 V, RL = 125 , CL = 15 pF	-	0.4	-	s
Turnoff delay	tOFF	8	VCC = 50 V, RL = 125 , CL = 15 pF	-	2.0	-	s

2409272301_TOSHIBA-TBD62783AFWG-Z-EHZ_C5349737.pdf

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